Gain mechanism of the vertical-cavity surface-emitting semiconductor laserDEPPE, D. G.Applied physics letters. 1990, Vol 57, Num 17, pp 1721-1723, issn 0003-6951Article

Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs-GaAs npn bipolar transistorsDEPPE, D. G.Applied physics letters. 1990, Vol 56, Num 4, pp 370-372, issn 0003-6951, 3 p.Article

Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laserHUANG, H; DEPPE, D. G.IEEE journal of quantum electronics. 2001, Vol 37, Num 5, pp 691-698, issn 0018-9197Article

Optical gain enhancement in Fabry-Perot microcavity lasersLEI, C; DEPPE, D. G.Journal of applied physics. 1992, Vol 71, Num 6, pp 2530-2535, issn 0021-8979Article

Fermi's golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasersDEPPE, D. G; HUANG, H.IEEE journal of quantum electronics. 2006, Vol 42, Num 3-4, pp 324-330, issn 0018-9197, 7 p.Article

Self-consistent calculation of the lasing eigenmode of the dielectrically apertured Fabry-Perot microcavity with idealized or distributed Bragg reflectorsDENG, Q; DEPPE, D. G.IEEE journal of quantum electronics. 1997, Vol 33, Num 12, pp 2319-2326, issn 0018-9197Article

Spontaneous emission from a dipole in a semiconductor microcavityDEPPE, D. G; LEI, C.Journal of applied physics. 1991, Vol 70, Num 7, pp 3443-3448, issn 0021-8979Article

Obtaining high efficiency at low power using a quantum-dot microcavity light-emitting diodeHUANG, H; DEPPE, D. G.IEEE journal of quantum electronics. 2000, Vol 36, Num 6, pp 674-679, issn 0018-9197Article

Spontaneous emission and optical gain in a Fabry-Perot microcavityDEPPE, D. G; LEI, C.Applied physics letters. 1992, Vol 60, Num 5, pp 527-529, issn 0003-6951Article

Low threshold half-wave vertical-cavity lasersHUFFAKER, D. L; SHIN, J; DEPPE, D. G et al.Electronics Letters. 1994, Vol 30, Num 23, pp 1946-1947, issn 0013-5194Article

All-epitaxial current- and mode-confined AlGaAs/GaAs vertical-cavity surface-emitting laserLU, D; AHN, J; DEPPE, D. G et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 246-247Conference Paper

Role of waveguide light emission in planar microcavitiesLIN, C. C; DEPPE, D. G; LEI, C et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 10, pp 2304-2313, issn 0018-9197Article

Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresDEPPE, D. G; HOLONYAK, N. JR.Journal of applied physics. 1988, Vol 64, Num 12, pp R93-R113, issn 0021-8979Article

All-epitaxial current- and mode-confined AlGaAs/GaAs VCSELLU, D; AHN, J; DEPPE, D. G et al.Electronics Letters. 2004, Vol 40, Num 21, pp 1336-1337, issn 0013-5194, 2 p.Article

Laser diode incorporating buried etched-void photonic patternGAZULA, D; QUADERY, S; DEPPE, D. G et al.Electronics Letters. 2005, Vol 41, Num 22, pp 1223-1225, issn 0013-5194, 3 p.Article

Temperature dependence of gain saturation in multilevel quantum dot lasersPARK, G; SHCHEKIN, O. B; DEPPE, D. G et al.IEEE journal of quantum electronics. 2000, Vol 36, Num 9, pp 1065-1071, issn 0018-9197Article

Spontaneous lifetime and quantum efficiency in light emitting diodes affected by a close metal mirrorHUANG, Z; LIN, C. C; DEPPE, D. G et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 12, pp 2940-2949, issn 0018-9197Article

Lithographic lasers with low thermal resistanceDEMIR, A; ZHAO, G; DEPPE, D. G et al.Electronics letters. 2010, Vol 46, Num 16, pp 1147-1149, issn 0013-5194, 3 p.Article

III-V nanostructures for quantum dot lasers and microcavity devicesDEPPE, D. G.International Conference on Indium Phosphide and Related Materials. 2004, pp 4-7, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Self-consistent calculation of lasing modes in a planar microcavityLIN, C. C; DEPPE, D. G.Journal of lightwave technology. 1995, Vol 13, Num 4, pp 575-580, issn 0733-8724Article

Photoluminescence measurements of band discontinuity in InP-InGaPAs heterostructuresBRUNEMEIER, P. E; DEPPE, D. G; HOLONYAK, N. JR et al.Applied physics letters. 1985, Vol 46, Num 8, pp 755-757, issn 0003-6951Article

Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers : Self-Organized Quantum DotsDEPPE, D. G; FREISEM, S; HUANG, H et al.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 13, pp 2119-2125, issn 0022-3727, 7 p.Article

Emission characteristics from dipoles with fixed positions in Fabry-Perot cavitiesLEI, C; DEPPE, D. G; HUANG, Z et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 5, pp 1383-1386, issn 0018-9197Article

Enhanced spontaneous emission using quantum dots and an apertured microcavityDEPPE, D. G; GRAHAM, L. A; HUFFAKER, D. L et al.IEEE journal of quantum electronics. 1999, Vol 35, Num 10, pp 1502-1508, issn 0018-9197Article

Sensitivity of Si diffusion in GaAs to column IV and VI donor speciesDEPPE, D. G; HOLONYAK, N. JR; BAKER, J. E et al.Applied physics letters. 1988, Vol 52, Num 2, pp 129-131, issn 0003-6951Article